GENERAL PURPOSE OF THE CONFERENCE

The aim of ESSDERC conferences is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits. ESSDERC and ESSCIRC (sister conference) are governed by a single Steering Committee. The increasing level of integration for system-on-chip design made available by advances in silicon technology is stimulating more than ever before the need for deeper interaction among technologists, device experts and circuits and system designers. While keeping separate Technical Program Committees, ESSDERC and ESSCIRC will share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions. The main themes for original contributions to be submitted to ESSDERC 2013 include but are not limited to the following:

Advanced CMOS Devices

Ultimate CMOS scaling for high performance, low power and low voltage devices, novel MOS device architectures (double and multiple gate, vertical, ballistic), circuit/device interaction and co-optimization, high-mobility channel engineered devices, SOI, SGOI, and SiON devices; SiGe, Ge, and strained devices. 3D integrated circuits.

Process & Integration

Front-end and back-end processes for fabrication of logic memory and 3D integrated circuits, including: substrate technologies, gate dielectrics, high k, gate stack, junction technology, cleaning and surface preparation, litography, etching, isolation technologies, thin dielectrics, shallow junctions, silicides, 3D integration, interconnects, low k dielectrics, advances in integration for ULSI; SOI, SGOI; advanced/novel memory process integration; logic and mixed-mode IC manufacturing; RF integration (passives, active devices); photonics integration; multilevel interconnects, advanced packaging.

Microwave and power solid state devices

RF CMOS, analog and mixed signal devices, passives, antennas, filters, RF MEMS, Bipolar, BiCMOS, smart power devices, high-voltage, high power devices, high temperature operation, SiC devices, CMOS compatible power devices, IC cooling. Discrete and integrated high power/current/voltage devices. Integrated RF components including inductors, capacitors, and switches. Note: Microwave includes millimeter wave and shorter wavelength (frequencies up to the THz region).

Modelling and Simulation

Numerical, analytical and statistical modeling of solid-state electronic and optoelectronic devices, quantum mechanical and non-stationary transport phenomena, ballistic transport, compact circuit modeling for devices and interconnects, modeling and simulation of front-end and back-end fabrication processes, electro-thermal modeling and simulation.

Characterization, Reliability and Yield

Characterization techniques, parameter extraction, advanced test structures and methodologies, reliability issues for new materials and devices (reliability of high-k and low-k materials), reliability of advanced interconnects, ESD, soft errors, noise and mismatch behavior, bias temperature inestabilities, EMI, defect monitoring and control, metrology, impact of back-end processing on devices, manufacturing technologies for reliability, physics of failure analysis.

Advanced and Emerging Memories

Novel memory cell concepts, embedded and stand-alone memories, DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS, nanocrystal memories, single and few electron memories, 3D IC stacks, organic memories, NEMS-based device, 3D integration, reliability and modeling.

MEMS, Bio-sensors and Display Technologies

Design, fabrication, modeling, reliability and packaging of all physical sensors and MEMS categories, bio-sensors for chemical, molecular and biological applications, BioMEMS, devices and technologies for lab-on-chip, integration of detectors, sensors, and actuators, CCDs and CMOS imagers, optical on chip communication, display technologies, TFTs, organic electronics, flexible substrate electronics, SoC and SiP packaging, microsystem packaging. Topics of interest in the MEMS area include resonators, switches, and passives for RF applications, integrated sensors, micro-optical devices, micro-fluidic and biomedical devices, micro power generators and energy harvesting devices, with particular emphasis on integrated implementations.

Optoelectronic and photonic devices

Compound semiconductors (GaAs, InP, GaN, SiC, alloys) and optoelectronic devices, including photovoltaic devices.

Emerging non-CMOS devices and technologies

Nanotubes, nanowires and nanoparticles for electronic, optoelectronic and sensor applications, materials and device related issues, single-electron, molecular and quantum devices, nanophotonics, spintronics, self-assembling methods, photonic devices. New device characterization techniques and performance evaluation methodologies. Energy harvesting.

Carbon-based devices

The latest devices based on carbon carbon nanotubes and graphene. Digital and and analog devices, high frequency devices based on carbon nanotubes and graphene including THz and optoelectronic devices.